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Carrier control in 2D transition metal dichalcogenides with Aluminium Oxide dielectric

C. S. Lau, J. Y. Chee, D. Thian, H. Kawai, J. Deng, S. L. Wong, Z. E. Ooi, Y. F. Lim, and K. E. J. Goh, “Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric”, Scientific Reports 9, 8769 (2019).

https://doi.org/10.1038/s41598-019-45392-9

Abstract

We report transport measurements of dual gated molybdenum disulfide and tungsten diselenide devices using atomic layer deposition grown aluminium oxide as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.

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