Coulomb blockade in Etched Single and Few Layer molybdenum disulfide Nanoribbons

Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low-temperature electron transport through etched 50–70 nm molybdenum disulfide nanoribbons showing current oscillations. Current through the device forms diamond-shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond-shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the molybdenum disulfide nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size 10–35 nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched molybdenum disulfide nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides.