QTE | IMRE
Single layer Molybdenum disulfide nanoribbon field effect transistor
D. Kotekar-Patil, J. Deng, S. L. Wong, C. S. Lau, K. E. J. Goh, “Single layer MoS2 nanoribbon field effect transistor”, Appl. Phys. Lett. 114, 013508 (2019).
Abstract
We study field effect transistor characteristics in etched single layer Molybdenum disulfide nanoribbon devices of width 50 nm with ohmic contacts. We employ a sulfur hexafluoride dry plasma process to etch molybdenum disulfide nanoribbons using low etching (RF) power allowing very good control over the etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5 V/dec using a global backgate. Moreover, we measure a high current density of 38 μA/μm, resulting in a high on/off ratio of the order of 105. We observe high mobilities with increasing source-drain bias.
This work was supported by the A*STAR (Singapore) QTE Grant No. A1685b0005.
