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Protected hole valley states in single-layer Molybdenum disulfide
F. Bussolotti, H. Kawai, S. L. Wong, K. E. J. Goh, “Protected hole valley states in single-layer MoS2”, Phys. Rev. B 99, 045134 (2019).
Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin Molybdenum disulfide
Liang Cheng, Xinbo Wang, Weifeng Yang, Jianwei Chai, Ming Yang, Mengji Chen, Yang Wu, Xiaoxuan Chen, Dongzhi Chi, Kuan Eng Johnson Goh, Jian-Xin Zhu, Handong Sun, Shijie Wang, Justin C. W. Song, Marco Battiato, Hyunsoo Yang, and Elbert E. M. Chia, “Far out-of-equilibrium spin populations trigger giant spin injection into atomically thin MoS2”, Nature Physics 15, 347 (2019).
Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet
Ping Kwan Johnny Wong, Wen Zhang, Fabio Bussolotti, Xinmao Yin, Tun Seng Herng, Lei Zhang, Yu Li Huang, Giovanni Vinai, Sridevi Krishnamurthi, Danil W Bukhvalov, Yu Jie Zheng, Rebekah Chua, Alpha T N'Diaye, Simon A Morton, Chao-Yao Yang, Kui‐Hon Ou Yang, Piero Torelli, Wei Chen, Kuan Eng Johnson Goh, Jun Ding, Minn‐Tsong Lin, Geert Brocks, Michel P de Jong, Antonio H Castro Neto, Andrew Thye Shen Wee, “Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet”, Advanced Materials 31, 1901185 (2019).
Carrier control in 2D transition metal dichalcogenides with Aluminium Oxide dielectric
C. S. Lau, J. Y. Chee, D. Thian, H. Kawai, J. Deng, S. L. Wong, Z. E. Ooi, Y. F. Lim, and K. E. J. Goh, “Carrier control in 2D transition metal dichalcogenides with Al2O3 dielectric”, Scientific Reports 9, 8769 (2019).
Coulomb blockade in Etched Single and Few Layer molybdenum disulfide Nanoribbons
Dharmraj Kotekar-Patil, Jie Deng, Swee Liang Wong, Kuan Eng Johnson Goh, “Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons”, ACS Applied Electronic Materials 1, 2202 (2019).